Photoconductive detection of millimeter waves using proton implanted GaAs

Citation
Cs. Wong et al., Photoconductive detection of millimeter waves using proton implanted GaAs, APPL PHYS L, 75(6), 1999, pp. 745-747
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
6
Year of publication
1999
Pages
745 - 747
Database
ISI
SICI code
0003-6951(19990809)75:6<745:PDOMWU>2.0.ZU;2-A
Abstract
We show that ion-damaged GaAs may be used to detect millimeter electromagne tic waves in photoconductive sampling gates. The semi-insulating GaAs mater ial which was implanted with a dose of 10(14) cm(-2) protons at an energy o f 200 keV gave a signal to noise improvement of about 11.4 dB when compared with as-grown semi-insulating GaAs. The improvement is in spite of a reduc ed carrier mobility in the ion-implanted material and is due to the shorter carrier lifetime and formation of ohmic contacts with the ion-damaged semi -insulating GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)01 532-6].