Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment

Authors
Cho, WY Lim, KS Ostapenko, S
Citation
Wy. Cho et al., Improvement of amorphous-carbon active-layer thin-film light-emitting diodes using room-temperature ultrasound treatment, APPL PHYS L, 75(6), 1999, pp. 760-762
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
6
Year of publication
1999
Pages
760 - 762
Database
ISI
SICI code
0003-6951(19990809)75:6<760:IOAATL>2.0.ZU;2-Q
Abstract
Ultrasound treatment (UST) applied at room temperature enhances electrolumi nescent intensity (maximum at 600 nm) and optical output in thin-film light -emitting diodes with hydrogenated amorphous-carbon as an active layer. Thi s positive UST effect is attributed to a reduction of the diode series resi stance caused by a change of the interface and contact resistances. The UST effect is saturated with increase of the ultrasound amplitude. (C) 1999 Am erican Institute of Physics. [S0003-6951(99)02232-9].