Sensitization of Er3+ emission at 1.5 mu m in SiO2 thermally grown on silicon by coimplantation of Yb

Authors
Kozanecki, A Homewood, K Sealy, BJ
Citation
A. Kozanecki et al., Sensitization of Er3+ emission at 1.5 mu m in SiO2 thermally grown on silicon by coimplantation of Yb, APPL PHYS L, 75(6), 1999, pp. 793-795
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
6
Year of publication
1999
Pages
793 - 795
Database
ISI
SICI code
0003-6951(19990809)75:6<793:SOEEA1>2.0.ZU;2-U
Abstract
Effects of Yb codoping on the photoluminescence of Er3+ ions at room temper ature in SiO2 films thermally grown on silicon are investigated. We demonst rate that for an excitation wavelength of 488 nm Yb ions act as efficient s ensitizers of the I-4(13/2)-I-4(15/2) emission of Er3+ ions. We have found that for the fixed dose of Yb the Er3+ intensity is directly proportional t o the Er concentration. Enhancement by a factor of 15 due to Yb codoping ha s been observed. A model of the mechanism responsible for sensitization is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)03432-4].