Freely migrating defects in ion-irradiated Cu3Au

The efficiency of producing freely migrating vacancy defects in irradiated Cu3Au was examined using electrical resistivity measurements of radiation-i nduced ordering on highly perfect single-crystal films. Relative efficienci es for He, Ne, and Ar bombardments at different ion energy and specimen tem perature were obtained. The ratio of the efficiencies of 0.6 MeV Ne to He i ncreased with temperature from similar to 0.25 at 340 K to a saturation val ue of similar to 0.40 at 520 K. For Ar and He, the ratio increased from sim ilar to 0.11 at 360 K to similar to 0.18 at 540 K. Estimates indicate that about half of all defects created in cascades are freely migrating. (C) 199 9 American Institute of Physics. [S0003-6951(99)02632-7].