Ferroelectricity in thin perovskite films

Citation
T. Tybell et al., Ferroelectricity in thin perovskite films, APPL PHYS L, 75(6), 1999, pp. 856-858
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
6
Year of publication
1999
Pages
856 - 858
Database
ISI
SICI code
0003-6951(19990809)75:6<856:FITPF>2.0.ZU;2-F
Abstract
We report on the investigation of ferroelectricity in thin tetragonal singl e-crystalline perovskite films of Pb(Zr0.2Ti0.8)O-3 grown by off-axis rf ma gnetron sputtering. The local ferroelectric properties of atomically smooth films, with thicknesses ranging from a few unit cells to 800 Angstrom, wer e measured using a combination of electric force microscopy and piezoelectr ic microscopy. The time dependence of the measured signals reveals a stable ferroelectric polarization in films down to thicknesses of 40 Angstrom. (C ) 1999 American Institute of Physics. [S0003-6951(99)01932-4].