Ferroelectric films and devices

Authors
Kingon, AI Streiffer, SK
Citation
Ai. Kingon et Sk. Streiffer, Ferroelectric films and devices, CURR OP SOL, 4(1), 1999, pp. 39-44
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
ISSN journal
13590286 → ACNP
Volume
4
Issue
1
Year of publication
1999
Pages
39 - 44
Database
ISI
SICI code
1359-0286(199902)4:1<39:FFAD>2.0.ZU;2-Y
Abstract
Recent developments in ferroelectric films have been made in terms of their application in nonvolatile memories and dynamic random access memories. On e highlight is the report of a complete description of the temperature-depe ndent dielectric behavior of (Ba,Sr)TiO3 films as a function of strain, com position, and thickness. For the first time, a direct link has been made be tween the thin film and bulk electrical properties.