Pb(Mg1/3Nb2/3)O-3 (PMN) alkoxide precursor solutions were synthesized and u
sed to prepare thin layers on TiO2/Pt/TiO2/SiO2/Si substrates by spin coati
ng. Many parameters like homogeneity of the solution and appropriate proces
sing must be controlled to minimize the pyrochlore formation. Optimization
of the processing allowed highly (111)-oriented thin films to be obtained.
Dielectric measurements and TEM investigations were performed and showed th
at PMN thin films exhibit relaxer behavior.