Remanent piezoelectric constant of PZT thin films

Citation
E. Cattan et al., Remanent piezoelectric constant of PZT thin films, FERROELECTR, 224(1-4), 1999, pp. 735-742
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
FERROELECTRICS
ISSN journal
00150193 → ACNP
Volume
224
Issue
1-4
Year of publication
1999
Pages
735 - 742
Database
ISI
SICI code
0015-0193(1999)224:1-4<735:RPCOPT>2.0.ZU;2-R
Abstract
The investigation of piezoelectric properties of materials in the thin laye r form has become an important task because of the increased range of their applications as actuators and sensors. Pb(Zr,Ti)O-3 thin films and the mod ified compositions have attracted great attention in recent years as promis ing for use in micro-electro-mechanical systems. The actuator magnitude, is an indirect function of the e(31) piezoelectric constant. To determine thi s constant we use an unusual experimental method. A remanent piezoelectric constant of -4.7 C/m(2) was obtained. To show the possible integration of t he piezoelectric films in flat silicon ultrasonic micromotors, we have depo sited a 3.5 mu m thick PZT on square membranes by rf magnetron sputtering. Self polarisation, remanent piezoelectric constant and dielectric permittiv ity are presented as function of the PZT thickness.