Piezoelectric and dielectric properties of sputter deposited (111), (100) and random-textured Pb(ZrxTi1-x)O-3 (PZT) thin films

Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron re active sputtering process with three metal targets (Pb, Zr, Ti). The orient ation was varied with the bottom electrode/PZT initial interlayer depositio n conditions. Series of 300 nm thick films with varying composition x have been prepared. The Ti and Zr ratio was changed by adjusting the powers of t he corresponding targets. The lead content was self stabilized by the proce ss at the deposition temperature of 570 degrees C. Polarization, dielectric and piezoelectric properties were studied. Coercive field, built-in electr ic field and unswitchable polarization for Ti-rich compositions have been d etermined by polarisation hysteresis loops.