Dependence of SiPN junction perimeter leakage on the channel-stop boron dose and interlayer material

The effects of the channel-stop boron dose (CSB) on the perimeter leakage c urrent (I-L) of local oxidation of silicon (LOCOS)-isolated Si pn junction diodes were found to depend on the interlayer material used. The I-L of dio des having a SiO2 interlayer slightly decreased in the low reverse voltage (V-r) region and increased in the high V-r region with a higher CSB, This i s attributed to the depletion layer reduction and carrier generation enhanc ement caused by the higher CSB, In contrast, the I-L. of TEOS-BPSG interlay er diodes increased by one order of magnitude with a higher CSB, Such anoma ly is explained by an inversion layer under the LOCOS oxide: it suppresses I-L by covering the carrier generation centers, but it is compensated by th e higher CSB.