1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

Authors
Udrea, F Chan, SSM Thomson, S Trajkovic, T Waind, PR Amaratunga, GAJ Crees, DE
Citation
F. Udrea et al., 1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance, IEEE ELEC D, 20(8), 1999, pp. 428-430
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
20
Issue
8
Year of publication
1999
Pages
428 - 430
Database
ISI
SICI code
0741-3106(199908)20:8<428:1KTIGB>2.0.ZU;2-4
Abstract
In this letter, me report the full development of 1.2 kV Trench IGBT's with ultralow on-resistance, latch-up free operation and highly superior overal l performance when compared to state of the art IGBT's, The minimum forward voltage drop at the standard current density of 100 A/cm(2) was 1.1 V for nonirradiated devices and 2.1 V for irradiated devices. The maximum control lable current density was in excess of 1000 A/cm(2).