Low-insertion-loss DP3T MMIC switch for dual-band cellular phones

Authors
Nagayama, A Nishibe, M Inaoka, T Mineshima, N
Citation
A. Nagayama et al., Low-insertion-loss DP3T MMIC switch for dual-band cellular phones, IEEE J SOLI, 34(8), 1999, pp. 1051-1055
Citations number
13
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
34
Issue
8
Year of publication
1999
Pages
1051 - 1055
Database
ISI
SICI code
0018-9200(199908)34:8<1051:LDMSFD>2.0.ZU;2-#
Abstract
We propose a new type of dual-pole triple-throw double heterojunction monol ithic microwave integrated circuit (IC) sn itch for use in digital cellular phon es, The IC we developed exhibits a ion; gate leakage current of 400 n A and an insertion loss as low as 0.4 dB, even at added power of 34 dBm at a frequency of 950 MHz. measured P-1 dB was about 36 dBm, and a low distort ion of 65 dBc was also obtained.