Direct-signal modulation using a silicon microstrip patch antenna

In this paper, a microstrip patch antenna is fabricated directly onto a hig h-resistivity silicon substrate without an insulating barrier, thereby form ing a distributed Schottky diode between the patch radiator metallization a nd ground plane. By applying de bias control to the patch metallization, di rect amplitude modulation of a CW microwave carrier can be achieved. Experi mental results are presented that show the far-field radiation characterist ics of the structure and its response to applied baseband modulation signal s. Also direct base-band signal detection using the patch antenna is discus sed.