49-GHz operation of an SCFL static frequency divider using high-speed interconnections and InP-based HEMTs

49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-mu m-gate InAlAs/InGaAs/InP HEMTs an d high-speed double-layer interconnections with a thick low-permittivity BC B inter-layer dielectric film. An experiment shows that the propagation del ay for the upper-laver line in the double-las er interconnections is less t han half of that for the conventional single-layer interconnections directl y on InP-substrate. The frequency divider with the double-laver interconnec tions is about 20% faster than the conventional one with the single-layer i nterconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.