A new method for quantum device simulation

This paper introduces a new method for simulation of quantum semiconductor devices. These devices are open systems and we have changed the conventiona l form of the boundary conditions of the Schrodinger equation in these devi ces into two differential equations and introduced a numerical method for s olving these equations in a full matrix form. We have applied our method to a resonant tunnelling diode as an illustrative example and found its I/V c urves. We also explain several properties of the proposed method, including varying effective mass simulation, complex eigenvalue determination and ph ase time and dwell time calculation.