Generalized saturation analysis for submicron MOSFETs and MODFETs

This paper presents a comprehensive generalized saturation analysis for sub micron MOSFETs and MODFETs. An analytical expression for the saturation vol tage of submicron MOSFETs is proposed. The dependence of the saturation vol tage of short-channel MOSFETs on both the gate voltage and the channel leng th has been extensively studied. A comparison is made among conventional, n umerical and proposed saturation voltages. The proposed model is acceptable as compared with the numerical data. Similar observations of the saturatio n-voltage dependence on both the gate voltage and the channel length have b een obtained for MODFETs. These obtained similarities between MODFETs and M OSFETs suggest that the analysis is applicable to all field effect transist ors where a conducting channel is created between a source region and a dra in region.