Hybrid circuit simulator including a model for single electron tunneling devices

Citation
M. Kirihara et al., Hybrid circuit simulator including a model for single electron tunneling devices, JPN J A P 1, 38(4A), 1999, pp. 2028-2032
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
4A
Year of publication
1999
Pages
2028 - 2032
Database
ISI
SICI code
Abstract
A hybrid circuit simulator has been developed that incorporates elements of single electron devices into the conventional circuit simulator SPICE (Sim ulation Program with Integrated Circuit Emphasis). The elements can consist of an arbitrary network of tunnel junctions and capacitors, whose characte ristics are calculated using a master equation method. By employing the hyb rid circuit simulator, we studied a turnstile device feeding the input of a complementary metal-oxide-semiconductor (CMOS) inverter, and were able to more successfully demonstrate the transfer of electrons through the turnsti le one by one in SPICE.