Super-resolution effect of semiconductor-doped glass

Citation
T. Nagase et al., Super-resolution effect of semiconductor-doped glass, JPN J A P 1, 38(3B), 1999, pp. 1665-1668
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
3B
Year of publication
1999
Pages
1665 - 1668
Database
ISI
SICI code
Abstract
Semiconductor-doped glass is proposed as a super-resolution layer for futur e ultra-high-density optical disc systems. It was confirmed that this mater ial system showed very fast response and large transmittance change by lase r-beam irradiation when CdSSe-doped glass was used. The rise time of the tr ansmittance change was less than 10 ns and the transmittance change reached 30%. These optical responses were obtained at a power density of the pumpe d laser beam of 1 MW/cm(2). This power density corresponds to the readout p ower in digital versatile disk-read only memory (DVD-ROM) and digital versa tile disk-random access memory (DVD-RAM) discs. This material system is reg arded as a potential candidate for a super-resolution readout layer that is applicable to both ROM and RAM discs.