Analysis of device characteristics for InGaN semiconductor lasers

Carrier overflow and perpendicular transverse mode in InGaN multi-quantum-w ell lasers have been analyzed by numerical calculation. A high acceptor con centration for the p-type cladding layer and the reduction of the active la yer volume have a large effect on the reduction of carrier overflow. Anti-g uide-like behavior of the waveguide mode is formed in InGaN laser structure s where the cladding layers have insufficient thickness. The layer structur e should be designed so ns to reduce the carrier overflow and suppress the anti-guide-like mode.