Growth of ZnO on sapphire (0001) by the vapor phase epitaxy using a chloride source

Zinc oxide (ZnO) films were deposited on sapphire (0001) substrates by vapo r phase epitaxy using ZnCl2 as a chloride source. The X-ray diffractogram s howed a typical pattern of epitaxially grown ZnO with a hexagonal structure , and a full width at half-maximum (FWHM) of 23.3 min was obtained in the X -ray diffraction profile. Growth rate of the ZnO film increased with increa sing growth temperature, the growth rate varied from 0.5 to 3.0 mu m/h. A s trong band edge emission at 370.0 nm was observed at 20 K photoluminescence spectra.