Titanium aluminide thin films are deposited on glassy carbon substrates by
the coaxial vacuum are deposition process. A rod-shaped Ti-Al alloy is empl
oyed as the evaporation source. In our vacuum arc system, because the spati
al position of plasma on the surface of the evaporation source can be contr
olled by pulsed are discharge, the thickness of the Ti-Al film can be contr
olled at nanometer scale. Amorphous stoichiometric Ti-Al films are synthesi
zed from one Ti-Al alloy target at room temperature by changing the number
of pulses of the are discharge. Multilayered Ti and Al films could also be
fabricated by changing the target and the number of pulsed are discharges.