Optimum growth parameters for type-II infrared lasers

The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-inf rared lasers grown by molecular beam epitaxy have been systematically studi ed, respectively, by Nomarski differential interference contrast, high-reso lution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 degrees C , based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 mu m laser, grown with the optimal growth parameters, exhibits a maximum cw ope rating temperature of 210 K. (C) 1999 American Institute of Physics. [S0021 -8979(99)08716-2].