On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

The influence of etching products on the surface layer formed during chlori ne (Cl-2) plasma etching of unmasked crystalline p-type Si(100) was investi gated using vacuum sample-transfer and angle-resolved x-ray photoelectron s pectroscopy (XPS). Varying the Cl-2 flow rate from 10.0 to 0.4 sccm at a co nstant pressure of 4 mTorr controlled the etching product concentration. Ga s-phase Cl, Cl-2, and SiCly (y = 0-3) were monitored (similar to 1 cm above the wafer) by optical emission spectroscopy. For a positive ion density of 7 x 10(10) cm(-3) and an average ion energy of similar to 140 eV, the Si e tching rate decreased linearly with Cl-2 flow from 2850 A/min at 10.0 sccm to 1920 A/min at 0.4 sccm. From these rates, mass balance, and the Si area, the ratio of product-to-etchant (SiCly-to-Cl) flux to the wafer varied fro m 0.078 to 11 at 10.0 and 0.4 sccm, respectively. After etching, Cl was pre sent in the Si(100) surface layer as SiClx (x = 1-3) at XPS Si (2p(3/2)) bi nding energies of 99.9, 101.0, and 102.0 eV, respectively, relative to Si a t 99.1 eV. The amounts of the three silicon chlorides and the total Cl (der ived from its 2p peak) were nearly independent of the product-to-etchant fl ux ratio. Depth profiles were obtained from an inversion of the observed ta ke-off angle dependences of the XPS signals. For the Cl-2 flow rates invest igated, the chlorinated surface layer was similar to 16 Angstrom thick, wit h Cl falling off in a graded fashion. The Cl areal density, integrated thro ughout the layer, was similar for all experimental conditions and averaged 2.63 +/- 0.15 x 10(15) Cl/cm(2). The stoichiometry of the chlorosilyl layer s was also independent of Cl-2 flow rate and averaged [SiCl]:[SiCl2]:[SiCl3 ]=[1.0]:[0.45 +/- 0.09]:[0.33 +/- 0.02]. Reaction pathways are presented to interpert both the constancy of the chlorinated surface layer and the decr ease in etching rate as the Cl-2 flow rate was decreased from 10.0 to 0.4 s ccm. (C) 1999 American Institute of Physics. [S0021-8979(99)00816-6].