Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals

Citation
V. Paillard et al., Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals, J APPL PHYS, 86(4), 1999, pp. 1921-1924
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
4
Year of publication
1999
Pages
1921 - 1924
Database
ISI
SICI code
0021-8979(19990815)86:4<1921:IOCMFA>2.0.ZU;2-N
Abstract
In this article, we show how the well-known one-phonon confinement model ca n be improved to determine the diameter of silicon nanocrystalline spheres from the optical phonon wave-number shift, even using a physical-meaning we ighting function. We show that the fundamental parameter is the knowledge o f the phonon dispersion. The accuracy of our approach is supported by exper imental data obtained by selective UV Raman scattering on nanocrystalline s ilicon thin films produced by size-selected silicon cluster beam deposition . (C) 1999 American Institute of Physics. [S0021-8979(99)03316-2].