Characterization of p-dopant interdiffusion in 1.3 mu m InGaAsP/InP laser structures using modulation spectroscopy

Authors
Jaeger, A Sun, WD Pollak, FH Reynolds, CL Geva, M
Citation
A. Jaeger et al., Characterization of p-dopant interdiffusion in 1.3 mu m InGaAsP/InP laser structures using modulation spectroscopy, J APPL PHYS, 86(4), 1999, pp. 2020-2024
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
4
Year of publication
1999
Pages
2020 - 2024
Database
ISI
SICI code
0021-8979(19990815)86:4<2020:COPII1>2.0.ZU;2-M
Abstract
We have investigated three In1-xGaxAsyP1-y/InP p-i-n multiple quantum well (MQW) laser structures with different p-doping profiles using contactless e lectroreflectance (CER) and piezoreflectance (PZR). From the observed Franz -Keldysh oscillations originating in the i-InGaAsP regions, we have evaluat ed the electric field and hence the amount of p-dopant interdiffusion, whic h is in agreement with secondary ion mass spectrometry measurements. The CE R/PZR spectra from the MQWs makes it possible to evaluate the parameters of these regions of the samples. (C) 1999 American Institute of Physics. [S00 21-8979(99)05616-9].