M. Schubert et al., Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 <= x <=1) lattice matched to GaAs, J APPL PHYS, 86(4), 1999, pp. 2025-2033
Determination of the complex dielectric function and the critical-point ene
rgies of (AlxGa1-x)(0.51)In0.49P, over the full range of composition x and
for photon energies E from 0.75 to 5 eV is reported from variable angle of
incidence spectroscopic ellipsometry. Native-oxide effects on the (AlxGa1-x
)(0.51)In0.49P optical functions are removed numerically. The highly disord
ered state of the metalorganic vapor-phase epitaxy grown samples is analyze
d by transmission electron microscopy. Optical anisotropy investigations re
vealed that the order-induced optical birefringence is negligible throughou
t. The augmentation of A. D. Rakic and M. L. Majewski [J. Appl. Phys. 80, 5
909 (1996)] to Adachi's critical-point model, i.e., consideration of Gaussi
an-like broadening function instead of Lorentzian broadening, is used for c
alculation of the isotropic (AlxGa1-x)(0.51)In0.49P dielectric function is
an element of. The optical functions spectra consistently match the experim
ental data, whereas previously reported model dielectric functions fail to
reproduce the correct absorption behavior of the quaternary, especially nea
r the fundamental band-to-band transition. The results are compared to thos
e presented previously, and influence of spontaneous chemical ordering is d
iscussed. (C) 1999 American Institute of Physics. [S0021-8979(99)04316-9].