The way in which in-grown strain impacts the optical properties of crystals
can be revealed when combined with annealing studies. During the annealing
process strains may be relieved, and when they are, the intrinsic energy b
ands adjust to these changes. These changes are readily detected by reflect
ion measurements. Energy changes in the intrinsic bands may also be reflect
ed in the extrinsic optical transitions. In this paper we show how stress c
hanges during the annealing process can be used to develop a model that exp
lains the origin of emission lines at 3.2898 and 3.2176 eV. (C) 1999 Elsevi
er Science B.V. All rights reserved.