Preparation and characterization of preferred oriented PZT films on amorphous substrates

The (001) preferred orientation of Nb-doped Pb(Zr0.52Ti0.48) O-3 (PZT) thin films was successfully realized on amorphous glass substrate with LaNiO3(L NO) as electrode by rf-sputtering method. It was found that the LNO film gr eatly promotes formation of the PZT film with pervoskite phase on amorphous substrate and the preferred orientation of the PZT film depends strongly o n the process of preparation. The experimental results show that the dielec tric constant and loss of the PZT films with the (001) preferred orientatio n are 1308 and 0.042, respectively, at 1 kHz, 0.05 V. The remanent polariza tion (P-r), saturation polarization (P-s) and coercive field (E-c) are 34.5 , 43 mu C/cm(2) and 105 kV/cm, respectively. The PZT films also show a 33 k V/cm internal bias field due to its (001) preferred orientation. The piezoe lectric coefficient d(33) of the PZT film without the poled treatment is ab out 15 pC/N due to its (001) preferred orientation. The effect of the forei gn stress on the piezoelectric voltage response of the PZT/LNO/glass was in vestigated. The results make us consider using the PZT film as an artificia l skin to realize the self-diagnosis of amorphous materials under the actio n of stress. (C) 1999 Kluwer Academic Publishers.