Amorphous chalcogenide Se1-x-yTexPy semiconducting alloys: thermal and mechanical properties

Citation
So. Kasap et al., Amorphous chalcogenide Se1-x-yTexPy semiconducting alloys: thermal and mechanical properties, J MATER SCI, 34(15), 1999, pp. 3779-3787
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
34
Issue
15
Year of publication
1999
Pages
3779 - 3787
Database
ISI
SICI code
0022-2461(199908)34:15<3779:ACSSAT>2.0.ZU;2-F
Abstract
Thermal and mechanical properties of ternary Se rich Se1-x-yTexPy semicondu cting glasses (Te < 20 at % and P < 10 at %) in vitreous bulk and film form have been studied by differential scanning calorimetry (DSC) and microhard ness measurements. Bulk vitreous samples were prepared by conventional melt quenching techniques and the amorphous photoreceptor films were prepared b y vacuum deposition onto oxidized aluminum substrates whose electrophotogra phic properties were reported previously. We measured the glass transition temperature T-g starting from a well defined thermal history and using both heating and cooling scans as a function of composition. T-g increases mono tonically with both Te and P content. Both bulk and film samples evince sim ilar compositional T-g dependence. The increase in T-g with the P content i n the glasses follows the Tanaka rule, that is, P addition has a networking effect due to the trivalent nature of the P atom and increases the mean co ordination number. Both Te and P additions initially inhibit crystallizatio n but at high Te contents (similar to 20 at %) the crystallization behavior is comparable to the pure a-Se case. Glasses with similar to 10 at % Te se em to have the greatest resistance to crystallization. The crystallization behavior does not correlate with the T-g behavior over the whole compositio n range. The Vickers microhardness H-V increases with both Te and P content . H-V vs. Te and P behavior is similar to that of T-g vs. Te and P content . The compositional dependence of both H-V and T-g can be explained by the same factors that reduce Se chain mobility. (C) 1999 Kluwer Academic Publis hers.