The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate

Authors
Liu, X Phang, JCH Chan, DSH Chim, WK
Citation
X. Liu et al., The properties of 2.7 eV cathodoluminescence from SiO2 film on Si substrate, J PHYS D, 32(14), 1999, pp. 1563-1569
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
32
Issue
14
Year of publication
1999
Pages
1563 - 1569
Database
ISI
SICI code
0022-3727(19990721)32:14<1563:TPO2EC>2.0.ZU;2-W
Abstract
Cathodoluminescence (CL) spectra from a silicon dioxide (SiO2) film on sili con (Si) substrate were studied. The temperature-dependent results of the 2 .7 eV peak suggest that the quantum efficiency increases but the build-up o f electron-beam-irradiation-induced luminescence centres decreases upon spe cimen cooling. The voltage-dependent behaviour of the 2.7 eV peak does not show any luminescence enhancement from the SiO2-Si interface.