Thermoelectric properties of Sr1-xLaxPbO3 (x <= 0.02)

A set of polycrystalline samples of Sr1-xLaxPbO3 (x < 0.02) were prepared w ith special care taken in controlling the La content to within 0.2%. The me asured resistivity (rho) and thermopower (S) change systematically with x, and the x-dependences are explained consistently on the basis of a rigid-ba nd picture in a single parabolic band. The carrier concentration evaluated ranges from 10(19) to 10(20) cm(-3), while the scattering time and the mobi lity do not appreciably change with the La substitution. The power factor ( S-2/rho) takes a maximum at a carrier concentration of 4 x 10(19) cm(-3), w hich is nearly the same value as for conventional thermoelectric semiconduc tors. These data clearly indicate that carrier doping in SrPbO3 is as contr ollable as that in conventional semiconductors.