RF-SPUTTERED PLZT THIN-FILM ON PT TI ELECTRODE/

PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with ex cess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were stu died. Film deposited at 200 degrees C or below crystallizes to a perov skite phase after annealing treatment at 550 degrees C or above, and t he crystal structure depends on the annealing treatment. The best crys tal structures and electronic properties were obtained when the thin f ilms were annealed at 600 degrees C to 650 degrees C for 1 h in O-2. F or the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, t he PLZT thin film structures consist mainly of pyrochlore phases. Howe ver, using an appropriate Ti layer thickness, PLZT thin films having g ood crystal structures and ferroelectric properties can be obtained, w ith typical remanent polarization value of 220 mC/m(2) and coercive fi eld strength of 6.5 MV/m.