Silicon carbide thin films synthesized by using pulsed YAG laser deposition

Silicon carbide (SiC) thin films were synthesized by a pulsed YAG laser dep osition method at different temperatures and bias voltages on Si substrates . Auger electron spectroscopy showed that a stoichiometric film could be pr epared without a negative bias voltage. Glancing angle X-ray diffraction sh owed that a crystalline SiC film could be prepared at a substrate temperatu re of 800 degrees C.