Characterization of RuO2 electrodes for ferroelectric thin films prepared by metal-organic chemical-vapor deposition using Ru(C11H19O2)(3)

Pure and conducting RuO2 thin films were deposited on Si substrates at 250 similar to 450 degrees C using Ru(C11H19O2)(3) as a precursor by low-pressu re metal-organic chemical-vapor deposition (LP-MOCVD). At a lower depositio n temperature, smoother and denser RuO2 thin films were deposited. The RuO2 thin films, which were crack free, adhered well onto the substrates and sh owed very low resistivities around 45 similar to 60 mu Omega cm. RuO2 thin films on (Ba, Sr)TiO3/Pt/SiO2/Si showed good properties, indicating that MO CVD RuO2 thin films from Ru(C11H19O2)(3) can be applied as electrodes of hi gh-dielectric thin films for capacitors in ultra-large-scale DRAMs.