Characterization of Pb(Zr,Ti)O-3 thin films prepared by metal-organic chemical-vapor deposition using a solid delivery system

Pb(Zr, Ti)O-3 (PZT) thin films were deposited on Pt/SiO2/Si substrates by m etal-organic chemical-vapor deposition technique using a solid delivery sys tem to improve the reproducibility of the deposition. The self-regulation m echanism, controlling the Pb-content of the film, was observed to work abov e a substrate temperature of 620 degrees C. Even with the self-regulation m echanism, PZT films having low leakage current were obtained only when the molar mixing ratio of the input precursors was 1<Pb/(Zr+Ti)<1.4. The leakag e current mechanism of the Pt/PZT/Pt capacitor was Schottky emission with a barrier height of 1.36 eV.