Structural dependence of the galvanomagnetic properties of transition-metal aluminide thin films

The structural dependences of the galvanomagnetic properties of Co-Al and F e-Al alloy films were investigated in this study. Ordered and disordered al loy films with thicknesses of 150 nm were prepared by, using the flash evap oration technique on the heated and cooled substrates, respectively. The te mperature dependence of resistance was measured in the range of 2 similar t o 300 K range with and without a magnetic field of 0.5 T. The influence of the order-disorder structural transition on the temperature dependence of t he resistance is discussed in connection with the results for the magnetic properties and is analyzed in the framework of the partial localization of the electronic states and variable-range hopping conductivity.