Theoretical and experimental analysis of high power Al-free InGaAsP/GaAs (lambda=0.808 mu m) laser diodes

Al-free InGaAsP/GaAs laser diodes with lambda=0.808 mu m were optimized usi ng the laser-photon model developed within a field-theoretical frame. Compa rison with experiment and classical laser and LED theories showed that the predictions of the theory were excellent over a wide range of operating con ditions. The optimized laser structure yielded a high efficiency, as calcul ated in the theory, and a high output power of up to 6 W in CW operation wi th uncoated 100-mu m-wide broad-area lasers. The maximum power density corr esponded to over 12 MW/cm(2), which was about 3 times higher than that achi eved using uncoated AlGaAs/GaAs lasers of the same emission wavelength.