Homoepitaxial growth of high-quality 6H-SiC thin films by using chemical-vapor deposition with bis-trimethylsilylmethane at a low temperature

High-quality, monocrystalline 6H-SiC thin films were epitaxially grown on 6 H-SiC (0001) substrates, which were 3.5 degrees off-axis from [0001] toward [11 (2) over bar 0], at 1320 degrees C by organo-metallic chemical-vapor d eposition. We used bis-trimethylsilylmethane [C7H2Si2], which is a non-toxi c and nonflammable organosilicon source having an alternate SiC bond struct ure. Lateral growth of the SiC film was observed by scanning electron micro scopy and atomic force microscopy. Triple-aids crystal diffraction analysis showed a strain-free epitaxial layer with a 11.4-arcsec full width at half maximum, whose quality was comparable to that of the substrate. The photol uminescence spectrum revealed that the 3C-SiC polytype was not included in the epitaxial layers.