Photoluminescence induced by Si-implantation into SiO2 layers at elevated temperatures

Si ions at an energy of 70 keV and a dose of 1.5x10(16) ions/cm(2) were imp lanted at room and elevated temperatures into 300 nm-thick SiO2 layers. The PL spectra showed a broad luminescence band around 600 nm. Higher peak int ensities were observed from the sample implanted at elevated substrate temp eratures than from those implanted at room temperature. On the contrary, th e electron spin resonance signal decrease in intensity as the substrate tem perature increases for implantation. From these observations, we conclude t hat increasing the implantation temperature effectively helps the formation of the radiative recombination centers in the Si-implanted SiO2 while redu cing the density of non-radiative paramagnetic defects.