Defect physics of ternary chalcopyrite semiconductors

The activation energy of acceptor and donor defect states in chalcopyrite c ompounds are calculated by using model based in the effective-mass theory f or the case of single-, double- and triple-point defect centers. It is foun d that the values of these energies thus calculated for shallow and moderat e deep levels are in reasonable agreement with those obtained from experime ntal data. From the analysis of the results, most of these levels have been identified as due to the presence of cation and anion vacancies and inters titials, and cation-cation and cation-anion antisite disorders. (C) 1999 El sevier Science B.V. All rights reserved.