Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films

Authors
Zhao, J Mao, DS Lin, ZX Yu, YH Liu, XH Yang, GQ
Citation
J. Zhao et al., Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films, MATER LETT, 40(2), 1999, pp. 78-82
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
40
Issue
2
Year of publication
1999
Pages
78 - 82
Database
ISI
SICI code
0167-577X(199907)40:2<78:ESLMFB>2.0.ZU;2-M
Abstract
Experimental results to fabricate Si-based light-emitting materials by Si a nd N coimplantation into SiO2 films are reported. Intense photoluminescence (PL) was observed from the implanted samples with and without annealing. T he PL intensity varied with the increased annealing temperature and had a m aximum at about 600 degrees C. The X-ray photoelectron spectroscopy (XPS) a nd Fourier transform infrared (FTLR) spectra were used to characterised the microstructures. It is suggested that the PL may originate from N-related defects and/or Si-O-based species. (C) 1999 Elsevier Science B.V. All right s reserved.