Evaluation of the extrinsic and intrinsic stacking-fault energies of GaP

Authors
Cohen, D Carter, CB
Citation
D. Cohen et Cb. Carter, Evaluation of the extrinsic and intrinsic stacking-fault energies of GaP, PHIL MAG A, 79(8), 1999, pp. 1805-1815
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
ISSN journal
13642804 → ACNP
Volume
79
Issue
8
Year of publication
1999
Pages
1805 - 1815
Database
ISI
SICI code
1364-2804(199908)79:8<1805:EOTEAI>2.0.ZU;2-4
Abstract
Stacking-fault double ribbons have been observed by transmission electron m icroscopy in undoped GaP films grown on Si. Values of the extrinsic and int rinsic stacking-fault energies of 40.5 +/- 3 mJ m(-2) and 43.4 +/- 2 mJ m(- 2), respectively, were obtained from measurements of the widths of the indi vidual ribbons. The ratio of the intrinsic to extrinsic stacking-fault ener gy was found to be 1.07 +/- 0.05.