Transport and optical properties of the layer semiconductor p-type GaSe doped with Li

Hall effect and photoluminescence (PL) measurements have been made on Li-do ped p-type GaSe. The carrier transport is dominated by the two acceptor lev els located at about 0.04 and 0.08 eV above the valence band. A new emissio n band at 2.030 eV (at 77 K) is observed in the PL spectra of samples. For the samples doped from 0.02 to 0.21 at.%, the PL intensity increases with i ncreasing Li concentration. The acceptor level of 0.08eV observed by Hall e ffect measurements has the same energy position as the radiative recombinat ion centre.