Sulfur: A donor dopant for n-type diamond semiconductors

Evidence for the donor nature of sulfur in diamond was obtained by introduc ing hydrogen sulfide into the microwave assisted plasma chemical vapor depo sition process. The sulfur was successfully doped into homoepitaxial diamon d (100) films, which exhibit n-type conduction by Hall-effect measurements in the temperature range of 250-550 K. The mobility of electrons at room te mperature was 597 cm(2) V-1 s(-1). The ionization energy of 0.38 eV was det ermined by measuring the carrier concentration as a function of temperature . [S0163-1829(99)50828-X].