Maximum metallic conductivity in Si-MOS structures

Authors
Pudalov, VM Brunthaler, G Prinz, A Bauer, G
Citation
Vm. Pudalov et al., Maximum metallic conductivity in Si-MOS structures, PHYS REV B, 60(4), 1999, pp. R2154-R2156
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
4
Year of publication
1999
Pages
R2154 - R2156
Database
ISI
SICI code
0163-1829(19990715)60:4<R2154:MMCISS>2.0.ZU;2-N
Abstract
We found that the conductivity of the two-dimensional electron system in Si metal-oxide-semiconductor structures is limited to a maximum value, G(max) , as either density increases or temperature decreases. This value G(max) i s weakly disorder dependent and ranges from 100 to 140e(2)/h for samples wh ose mobilities differ by a factor of 4. [S0163-1829(99)51528-2].