Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps

Citation
Sa. Crooker et al., Magnetic semiconductor quantum wells in high fields to 60 Tesla: Photoluminescence linewidth annealing at magnetization steps, PHYS REV B, 60(4), 1999, pp. R2173-R2176
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
4
Year of publication
1999
Pages
R2173 - R2176
Database
ISI
SICI code
0163-1829(19990715)60:4<R2173:MSQWIH>2.0.ZU;2-O
Abstract
Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report t he direct observation of a series of steplike reductions in the magnetic al loy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between 0 a nd 60 T. This disorder, measured through the linewidth of low-temperature p hotoluminescence spectra, drops abruptly at similar to 19, 36, and 53 T, in concert with observed magnetization steps. Conventional models of alloy di sorder (developed for nonmagnetic semiconductors) reproduce the general sha pe of the data, but markedly underestimate the size of the linewidth reduct ion. [S0163-1829(99)50328-7].