Intraband relaxation in CdSe quantum dots

Citation
P. Guyot-sionnest et al., Intraband relaxation in CdSe quantum dots, PHYS REV B, 60(4), 1999, pp. R2181-R2184
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
60
Issue
4
Year of publication
1999
Pages
R2181 - R2184
Database
ISI
SICI code
0163-1829(19990715)60:4<R2181:IRICQD>2.0.ZU;2-S
Abstract
The relaxation of the 1P to 1S electronic states of CdSe semiconductor nano crystals is followed by infrared pump-probe spectroscopy. Fast (1 ps) and s low (>200 ps) components are-observed. Using different capping molecules to control the hole states, we show how the intraband relaxation slows down a s the hole is in a shallow trap, a deep trap, or a charge-separated complex , providing strong support for an electron-hole Auger coupling. The slow co mponent corresponds to an energy relaxation rate orders of magnitude slower than in bulk systems. It may be the first indication of the phonon bottlen eck effect long expected in strongly confined quantum dots. [S0163-1829(99) 51128-4].