We have performed low-temperature photoluminescence (PL), resonant PL (RPL)
, and PL excitation (PLE) measurements on different series of self-organize
d InAs/GaAs quantum dots (QD's) in samples with an InAs nominal coverage (L
) varying from 1.2 to 3 monolayers (ML). Drastic changes in the PL spectra
have been observed for L values spanning across the so-called critical thic
kness L-c (similar to 1.7 ML). RPL has shown that both QD's and quasi-three
-dimensional QD precursors contribute to the spectra of samples with L less
than or equal to L-c. PLE measurements have allowed us to introduce an acc
urate determination of L-c and to verify its dependence on sample growth co
nditions. Finally, the analysis of PL spectra in all investigated samples a
nd its comparison with spatially resolved PL measurements has suggested a d
ifferent interpretation of doublet and triplet bands usually found for L si
milar to L-c and previously ascribed to excited states or multimodal distri
butions of QD families. [S0163-1829(99)05627-1].