Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization

The first results obtained in studies of the temperature dependences of ele ctrical conductivity and Hall constant of n-CdGeAs2 single crystals prepare d by low-temperature crystallization are reported. It has been established that the method developed permits growing single crystals with a free-elect ron concentration similar or equal to(1-2) x 10(18) cm(-3) and a Hall mobil ity similar or equal to 10000 cm(2)/(Vs) at T = 300 K. It is shown that the temperature dependence of Hall mobility exhibits a behavior characteristic of electron scattering by lattice vibrations, whereas below 150 K a deviat ion from this law is observed to occur evidencing an increasing contributio n of static lattice defects to scattering. The Hall mobility in the crystal s prepared was found to reach similar or equal to 36000 cm(2)/(Vs) at 77 K. Photosensitive heterojunctions based on n-CdGeAs2 single crystals were pre pared. The spectral response of the photosensitivity of these structures is analyzed. It is concluded that this method is promising for preparation of perfect CdGeAs2 crystals. (C) 1999 American Institute of Physics. [S1063-7 834(99)01207-1].