Enhancement of Raman scattering intensity in porous silicon

Authors
Kompan, ME Novak, II Kulik, VB Kamakova, NA
Citation
Me. Kompan et al., Enhancement of Raman scattering intensity in porous silicon, PHYS SOL ST, 41(7), 1999, pp. 1207-1209
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
7
Year of publication
1999
Pages
1207 - 1209
Database
ISI
SICI code
1063-7834(199907)41:7<1207:EORSII>2.0.ZU;2-#
Abstract
An enhancement in inelastic light scattering intensity from porous-silicon quantum wires has been discovered. It is shown that this effect is caused b y a decrease in the absorption coefficient of the optical medium formed by quasi-one-dimensional structures, with the crystal structure of the wires t hemselves remaining unchanged. (C) 1999 American Institute of Physics. [S10 63-7834(99)04107-6].