Enhancement of Raman scattering intensity in porous silicon

Citation
Me. Kompan et al., Enhancement of Raman scattering intensity in porous silicon, PHYS SOL ST, 41(7), 1999, pp. 1207-1209
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
7
Year of publication
1999
Pages
1207 - 1209
Database
ISI
SICI code
1063-7834(199907)41:7<1207:EORSII>2.0.ZU;2-#
Abstract
An enhancement in inelastic light scattering intensity from porous-silicon quantum wires has been discovered. It is shown that this effect is caused b y a decrease in the absorption coefficient of the optical medium formed by quasi-one-dimensional structures, with the crystal structure of the wires t hemselves remaining unchanged. (C) 1999 American Institute of Physics. [S10 63-7834(99)04107-6].